Fraunhofer Institute for Applied Optics and Precision Engineering IOFElectron beam lithography (EBL) is the central technology for the generation of micro- and nanostructures that go far beyond the requirements of classical microelectronics. At Fraunhofer IOF, we use EBL to develop and realize customized structures for state-of-the-art optical components, from meta-optics and photonic integrated circuits (PICs) to classical diffraction gratings and diffractive structures. Our many years of experience and high-end VISTEC SB350 OS system enable structures in the sub-65 nm range on large surfaces up to 300 mm in diameter.
Electron Beam Lithography
Maximum precision and flexibility for optics on both small and large surfaces
Our Services
We offer the complete process chain for the development and production of ultra-fine optical structures using electron beam lithography - from design consulting to characterization of the finished components. Thanks to state-of-the-art technology and our experienced team, we realize sophisticated individual structures and small series, adapted to the individual requirements of research and industry.
Benfits of Electron Beam Lithography
Electron beam lithography at Fraunhofer IOF offers unique advantages for the development and production of sophisticated optical micro- and nanostructures:
- Highest precision: Minimum structure size < 65 nm, address pitch 1 nm
- Positioning accuracy: <15nm (3δ)
- Large areas: Exposure of wafers up to 300 mm in diameter, special formats up to 15 mm thick
- Flexible geometries: Freely customizable layouts, complex designs, cell projection
- Efficient data processing: Fast implementation of complex patterns through pattern projection
EBL ist ein direktes Belichtungsverfahren, bei dem ein fokussierter Elektronenstrahl gezielt eine strahlungsempfindliche Schicht (Resist) auf dem Substrat beschreibt. Durch die steuerbare Ablenkung des Strahls lassen sich beliebig komplexe 2D-Muster mit extrem hoher Auflösung erzeugen. Nach der Entwicklung des Resists dient die erzeugte Struktur als Vorlage für die Übertragung in das Zielmaterial, meist durch nachfolgende Plasma etching processes. Die EBL eignet sich besonders zur Herstellung von Masterstrukturen für optische Funktionselemente, die mit Standard-Lithographie nicht erreichbar sind.
Schematic representation of the structuring process
